%0 Journal Article
%T A novel high speed lateral IGBT with a self-driven second gate<br>一种新型的快速关断绝缘栅双极晶体管
%A Hu Hao
%A Chen Xingbi
%A <br>胡浩
%A 陈星弼
%J 半导体学报
%D 2012
%I 
%X A novel lateral IGBT with a second gate on the emitter portion is presented. A PMOS transistor, driven by the proposed device itself, is used to short the PN junction at the emitter while turned off. Low on state voltage and fast turn off speed are obtained without side-effects such as snapback I-V characteristics and difficulties of process complexity. Numerical simulation results show a drop of fall time from 120 to 12 ns and no increase of on state voltage.
%K lateral IGBT
%K second gate
%K high speed<br>横向功率器件，绝缘栅双极晶体管，快速关断
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F1E2B134F3CCFA08B48A70C8C3EE344F&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=38B194292C032A66&sid=C0EFCA68F1CAAF14&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12