%0 Journal Article
%T The Convergence Characteristic of the Forward I-V Characteristic Curves of a Semiconductor Silicon Barrier at Different Temperatures<br>不同温度下半导体硅势垒的正向I-V特性曲线的汇聚特性
%A Miao Qinghai
%A Lu Shuojin
%A Zhang Xinghu
%A Zong Fujian
%A Zhu Yangjun
%A <br>苗庆海
%A 卢烁今
%A 张兴华
%A 宗福建
%A 朱阳军
%J 半导体学报
%D 2008
%I 
%X The I-V-(T) characteristic curves of p-n junctions with the forward voltage as the independent variable,the logarithm of forward current as the dependent variable,and the junction temperature as the parameter,almost converge at one point in the first quadrant.The voltage corresponding with the convergence point nearly equals the bandgap of the semiconductor material.This convergence point can be used to obtain the I-V characteristic curve at any temperature.
%K semiconductor barrier
%K bandgap
%K convergent point
%K forward I-V characteristic curves<br>半导体势垒
%K 禁带宽度
%K 汇聚点
%K 正向I-V特性曲线
%K semiconductor
%K barrier
%K bandgap
%K convergent
%K point
%K forward
%K I-V
%K characteristic
%K curves
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=DF362CF1C8DDEF83FFB118CD937571B3&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=E158A972A605785F&sid=46FF101E7ECF9F15&eid=06DAE5E1DF7D0B6A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10