%0 Journal Article
%T Improved Statistical Interconnect Timing Analysis Considering Scattering Effect
%A Lin Saihu
%A Yang Huazhong
%A Luo Rong
%A Wang Hui
%A <br>Lin Saihu
%A Yang Huazhong
%A Luo Rong
%A Wang Hui
%J 半导体学报
%D 2006
%I 
%X We propose an improved statistical approach for modeling interconnect slew that takes into account the scattering effect of a nanoscale wire.We first propose a simple,closed-form scattering effect resistivity model,considering the effects of both width and thickness.Then we use this model to derive statistical expressions of the slew metrics using the SS2M model.We find that the delay and slew can be greatly increased when considering the scattering effect.The proposed statistical SS2M model has an average error of 4.16% with respect to SPICE Monte Carlo simulations,with an average error of standard deviation of only 3.06%.
%K interconnect
%K scattering effect
%K timing analysis<br>互连线
%K 散射效应
%K 时序分析
%K interconnect
%K scattering
%K effect
%K timing
%K analysis
%K 散射效应
%K 改进
%K 互连线
%K 统计
%K 时序分析
%K Effect
%K Scattering
%K Timing
%K Analysis
%K Interconnect
%K Statistical
%K standard
%K deviation
%K Monte
%K Carlo
%K simulations
%K average
%K error
%K find
%K delay
%K increased
%K expressions
%K metrics
%K effects
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F1DBDF8D1BE1CDB2&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=708DD6B15D2464E8&sid=7F4621C62254E923&eid=CC5F4A47280A3584&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10