%0 Journal Article
%T Fabrication of a High-Performance RTD on InP Substrate<br>一种高性能InP基谐振隧穿二极管的研制
%A Qi Haitao
%A Feng Zhen
%A Li Yali
%A Zhang Xiongwen
%A Shang Yaohui
%A Guo Weilian
%A <br>齐海涛
%A 冯震
%A 李亚丽
%A 张雄文
%A 商耀辉
%A 郭维廉
%J 半导体学报
%D 2007
%I 
%X InGaAs/AlAs RTD material structure on InP substrate is designed and grown by molecular beam epitaxy.A device with good negative differential resistance characteristics and a higher resistive cutoff frequency is fabricated using mesa isolation,metal lift-off,wet chemical etch,and air bridge technologies.The forward bias peak-to-valley current ratio (PVCR) and reverse bias PVCR are about 17.5 and 28,respectively.The peak current density is 56kA/cm2,and the data fitting resistive cutoff frequency using an RNC circuit model is 82.8GHz.The experiment lays a foundation for the design and fabrication of high-performance RTD and monolithic integration circuits of RTD and other high speed and high frequency three terminal devices.
%K resonant tunneling diode
%K InP
%K negative differential resistance
%K resistive cutoff frequency<br>谐振隧穿二极管
%K InP
%K 负阻
%K 阻性截止频率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9571222C952D86DD6F816B09B3F00C40&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=59906B3B2830C2C5&sid=8C40A730A9894EF1&eid=2F67C4FDB50F86BC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8