%0 Journal Article
%T The effect of δ-doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by MOCVD
%A 朱邵歆
%A 闫建昌
%A 曾建平
%A 张宁
%A 司朝
%A 董鹏
%A 李晋闽
%A 王军喜
%J 半导体学报
%D 2013
%I 
%X The effect of periodic delta-doping and modulation-doping on high Al content n-AlxGa1-xN (x= 0.55) epilayers grown by MOCVD has been investigated. Measured by XRD, AFM, contactless sheet resistance, and Hall-effect tests, δ-doped and modulation-doped n-AlxGa1-xN have better crystal quality, surface morphology and electrical properties as compared with uniformly-doped n-AlxGa1-xN. These improvements are attributed to the SiNx growth mask induced by δ-doping layers and the dislocation-blocking effect induced by both growth techniques. In addition, due to the broadened doping profile ascribed to enhanced dopant diffusion at high growth temperatures (1150 ℃) of n-Al0.55Ga0.45N, modulation-doped n-Al0.55Ga0.45N has similar properties as δ-doped n-Al0.55Ga0.45N.
%K n-AlxGa1-xN
%K MOCVD
%K δ-doping
%K modulation-doping
%K dopants
%K diffusion
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A2B81C56D90B149C497B7DDD733AA287&yid=FF7AA908D58E97FA&vid=339D79302DF62549&iid=94C357A881DFC066&sid=F0BD85756E0B7B28&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9