%0 Journal Article
%T Large-signal modeling method for power FETs and diodes<br>功率FET和二极管大信号建模方法
%A Sun Lu
%A Wang Jiali
%A Wang Shan
%A L Xuezheng
%A Shi Hui
%A Wang Na
%A Guo Shengping
%A <br>孙璐
%A 王家礼
%A 王珊
%A 李雪铮
%A 石慧
%A 王娜
%A 郭生平
%J 半导体学报
%D 2009
%I 
%X Under a large signal drive level, a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes. A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices. The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.
%K large signal model
%K extraction method
%K nonlinear scattering function
%K semiconductor devices<br>大信号模型
%K 提取方法
%K 非线性散射函数
%K 半导体器件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=43795335D3FA1A2E93C1CBD2F7A8F1E6&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=B31275AF3241DB2D&sid=67F2070E7C6DECBA&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9