%0 Journal Article
%T Characteristics of vertical double-gate dual-strained-channel MOSFETs<br>垂直双栅双应变沟道的MOSFETs特性分析
%A Gao Yong
%A Yang Jing
%A Yang Yuan
%A Liu Jing
%A <br>高勇
%A 杨婧
%A 杨媛
%A 刘静
%J 半导体学报
%D 2009
%I 
%X A novel device structure with a vertical double-gate and dual-strained channel is presented. The electri-cal characteristics of this device with a gate length of 100 nm are simulated. With a Ge content of 20%, the drain currents of the strained-Si NMOSFET and the strained-SiGe PMOSFET compared to the universal SOI MOSFETs are enhanced by 26% and 33%, respectively; the risetime and the falltime of the strained-channel CMOS are greatly decreased by 50% and 25.47% compared to their traditional Si channel counterparts. The simulation results show that the vertical double-gate (DG) dual-strained-channel MOSFETs exhibit better drive capability, a higher transcon-ductance, and a faster circuit speed for CMOS compared to conventional-Si MOSFETs. The new structure can be achieved by today's semiconductor manufacturing level.
%K vertical
%K double-gate
%K dual-strained-channel<br>垂直
%K 双栅
%K 双应变沟道
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=47219DA472927B4402308276673730FB&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=B31275AF3241DB2D&sid=3D87B8A29CE460E7&eid=B31275AF3241DB2D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0