%0 Journal Article
%T Influence of Growth Rate and Substrate Temperature on Self-Organized InxGa1-xAs/GaAs Quantum Dots Grown by MBE<br>衬底温度和生长速率对MBE自组织生长In_xGa_(1-x)As/GaAsQD的影响
%A YU Lei
%A ZENG Yi
%A |ping
%A PAN Liang
%A KONG Mei
%A |ying
%A LI Jin
%A |min
%A LI Ling
%A |xiao
%A ZHOU Hong
%A |wei
%A <br>于磊
%A 曾一平
%A 潘量
%A 孔梅影
%A 李晋闽
%A 李灵霄
%A 周宏伟
%J 半导体学报
%D 2000
%I 
%X 研究GaAs基InxGa1-xAs/GaAs量子点(QD)的MBE生长条件,发现在一定的/比下,衬底温度和生长速率是影响InxGa1-xAs/GaAsQD形成及形状的一对重要因素,其中衬底温度直接影响着In的偏析程度,决定了InxGa1-xAs/GaAs的生长模式;生长速率影响着InxGa1-xAs外延层的质量,决定了InxGa1-xAs/GaAsQD的形状及尺寸.通过调节衬底温度和生长速率生长出了形状规则、尺寸较均匀的InxGa1-xAs/GaAsQD(x=0.3)
%K In_xGa_(1-x)As/GaAs QD
%K self\|organized growth
%K substrate temperature
%K growth rate
%K 0652
%K 05<br>In_xGa_(1-x)As/GaAs量子点(QD)
%K 自组织生长
%K 衬底温度
%K 生长速率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=13CDEDCBACCB8DD2&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=DF92D298D3FF1E6E&sid=4A8412AEEC89236B&eid=46682C11199DA00C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0