%0 Journal Article
%T CFD Simulation of Flow Patterns in GaN-MOCVD Reactor<br>GaN-MOCVD设备反应室流场的CFD数值仿真
%A Liu Yi
%A Chen Haixin
%A Fu Song
%A <br>刘奕
%A 陈海昕
%A 符松
%J 半导体学报
%D 2004
%I 
%X Computational fluid dynamics (CFD) simulation is performed to study the flow dynamics in the metal-organic chemical vapor deposition(MOCVD) reactor.The numerical code is based on the SIMPLE scheme with the non-stagger grids system.The improved pressure-velocity method by Rhie & Chow is adopted to avoid unreasonable pressure fluctuation.The governing equations are discretized with a finite volume method.CFD simulation gives the flow structures in the planetary MOCVD reactor which has complex geometrical structures and motion style.The effect of the different geometrical size and working parameters on the flow patterns in the MOCVD reactor is studied.The CFD simulation results give constructive suggestion to the configuration design and the parameter optimization of the MOCVD reactor.
%K CFD
%K GaN
%K MOCVD
%K numerical simulation<br>CFD
%K GaN
%K MOCVD
%K 数值仿真
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A98254862033D4B0&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=59906B3B2830C2C5&sid=71706E59E547123D&eid=5B76AAD74B03D886&journal_id=1674-4926&journal_name=半导体学报&referenced_num=10&reference_num=17