%0 Journal Article
%T A 30 Finger Microwave Power SiGe HBT with 23V BVCBO and fT 7GHz<br>BV_(CBO)为23V且f_T为7GHz30叉指微波功率SiGe HBT(英文)
%A Xiong Xiaoyi
%A <br>熊小义
%A 张伟
%A 许军
%A 刘志宏
%A 陈长春
%A 黄文韬
%A 李希有
%A 钟涛
%A 钱佩信
%J 半导体学报
%D 2004
%I 
%X With modified necessary steps for SiGe implementation,multi-finger power SiGe H BT devices are fabricated in a CMOS process line with 125mm wafer.The devices s how quite high BV CBO 23V.The current gain is very stable over a wide I C.The f T is up to 7GHz at a DC bias of I C=40mA and V CE=8 V,which show high current handling capability.Under continuous conditions in B o peration,the 31dBm output power,10dB G p,and 33.3% of PAE are obtained at 3GHz .Based on extensive tests,it has been demonstrated that the yield on a wafer is up to 85%,which means that the research results are capable of commercialization .
%K SiGe HBT
%K f
%K T
%K power<br>SiGeHBT
%K fT
%K 功率管
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FBA0DA56E01FFE4A&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=F3090AE9B60B7ED1&sid=5C10CB62DEB8898B&eid=D92306F676C2377C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=4&reference_num=9