%0 Journal Article
%T Performance Comparison of GaAs/AlGaAs Quantum Well Infrared Photodetectors Grown by MOCVD and MBE<br>MOCVD与MBE生长GaAs/AlGaAs量子阱材料的红外探测器特性比较
%A LI Na
%A LI Ning
%A LU Wei
%A DOU Hong
%A |fei
%A CHEN Zhang
%A |hai
%A LIU Xing
%A |quan
%A XCSHEN
%A <br>李娜
%A 李宁
%A 陆卫
%A 窦红飞
%A 陈张海
%A 刘兴权
%A 沈学础
%A H H Tan
%A LanFu
%A C Jagadish
%A M B Johnston
%A M Gal
%J 半导体学报
%D 2000
%I 
%X 用金属有机物化学气相沉积法(MOCVD)生长GaAs/AlGaAs量子阱材料,并制成红外探测器.测量了材料的光致发光光谱和探测器的光电流响应光谱及其它光电特性,峰值波长7.9μm,响应率达到6×103V/W,与分子束外延法(MBE)生长的材料和相关器件进行了比较,MOCVD法可满足量子阱材料和器件的要求.
%K GaAs/AlGaAs MQW
%K Infrared Photodetector
%K MOCVD
%K MBE<br>GaAs/AlGaAs
%K 量子阱红外探测器
%K MOCVD
%K MBE
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=666C21845EF2B361&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=94C357A881DFC066&sid=5319469C819FCFF1&eid=68FDAD96FCC0AB1B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=6