%0 Journal Article
%T New Surface Treatment Technique of Porous Silicon<br>多孔硅新的表面处理技术
%A Yu Xianwen
%A Chen Yanyan
%A Ying Taokai
%A Cheng Cungui
%A Yu Ke
%A Zhu Ziqiang
%A <br>虞献文
%A 陈燕艳
%A 应桃开
%A 程存归
%A 郁可
%A 朱自强
%J 半导体学报
%D 2005
%I 
%X Using the anode oxidation surface treatment technique on PS introduced can efficiently avoid the PS to crack,shrink or collapse during the natural drying process. The anode oxidation surface treatment means to use a few negative ions to effect the PS surface,to clear up dangling bonds and to satisfy the chemical valence of Si molecules,so as to avoid the asymmetry inner stress between the molecules caused by restructure and to make the PS surface performance stable.Thus the PS with steady performance which can exist in the air for a long time can be prepared.
%K cathode deoxidization
%K anodic oxidation
%K surface treatment technique
%K porous silicon<br>阴极还原
%K 阳极氧化
%K 表面处理技术
%K 厚膜
%K 多孔硅
%K 表面处理技术
%K Porous
%K Silicon
%K Technique
%K 干燥保存
%K 空气
%K 表面性能
%K 内应力
%K 均匀
%K 分子间
%K 结构重组
%K 稳定
%K 悬空键
%K 化合价
%K 硅表面
%K 离子作用
%K 使用
%K 问题
%K 破坏
%K 坍塌
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B66DC43766E10E52&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=0B39A22176CE99FB&sid=DA74B62FE4348759&eid=0493D643315CD829&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=9