%0 Journal Article
%T Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides
%A Zheng Zhongshan
%A Liu Zhongli
%A Zhang Guoqiang
%A Li Ning
%A Li Guohu
%A Ma Hongzhi
%A Zhang Enxi
%A Zhang Zhengxuan
%A Wang Xi
%A <br>Zheng Zhongshan
%A Liu Zhongli
%A Zhang Guoqiang
%A Li Ning
%A Li Guohu
%A Ma Hongzhi
%A Zhang Enxi
%A Zhang Zhengxuan
%A Wang Xi
%J 半导体学报
%D 2005
%I 
%X 为了提高SIMOX(separation-by-implanted-oxygen)SOI(silicon-on-insulator)结构中埋氧层(BOX)的总剂量辐射硬度,埋氧层中分别注入了2×1015和3×1015cm-2剂量的氮.实验结果表明,在使用Co-60源对埋氧层进行较低总剂量的辐照时,埋氧层的总剂量辐射硬度对注氮剂量是非常敏感的.尽管埋氧层中注氮剂量的差别很小,但经5×104 rad(Si)剂量的辐照后,注入2×1015cm-2剂量氮的埋氧层表现出了比未注氮埋氧层高得多的辐射硬度,而注入3×1015cm-2剂量氮的埋氧层的辐射硬度却比未注氮埋氧层的辐射硬度还低.然而,随辐照剂量的增加(从5×104到5×105rad(Si)),这种埋氧层的总剂量辐射硬度对注氮剂量的敏感性降低了.采用去掉SOI顶硅层的MOS高频C-V技术来表征埋氧层的总剂量辐射硬度.另外,观察到了MSOS(metal-silicon-BOX-silicon)结构的异常高频C-V曲线,并对其进行了解释.
%K SIMOX
%K buried oxide
%K radiation-hardness
%K nitrogen implantation<br>SIMOX
%K 埋氧
%K 辐射硬度
%K 注氮
%K SIMOX
%K buried
%K oxide
%K radiation-hardness
%K nitrogen
%K implantation
%K SIMOX
%K 埋氧层
%K 总剂量
%K 辐射硬度
%K 注氮剂量
%K 敏感性
%K Oxides
%K Nitrogen
%K Implantation
%K Radiation
%K Hardness
%K abnormal
%K curve
%K addition
%K technique
%K silicon
%K layers
%K characterized
%K sensitivity
%K increasing
%K However
%K buried
%K oxide
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9756AB44A3C33B05&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=94C357A881DFC066&sid=D5B44BB3CCE27369&eid=9C230FD2B3A7F308&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13