%0 Journal Article
%T Study of Static Characteristics and Leakage Current in High Field Region of Heterostructure Isolated Gate Field Effect Transistor<br>异质结绝缘栅场效应晶体管(HIGFETs)高场区静态特性模型和栅泄漏电流研究
%A Gu Cong/
%A <br>顾聪
%A 王德宁
%A 王渭源
%J 半导体学报
%D 1990
%I 
%X Based on the improved charge control model, combinating GSW velocity vs field relation,the analytic formulas of the static characteristics, such as I-V, I_Ds-V_(DS), transconductance G_(ms)conductance g_D and the gate capacitance Co in the new high field region (I_D> l_(DS)) areobtained. The theoretical results are in good agreement with the experimental data. On this basis,an equivalent circuit model of the gate leakage current is developed. The cause of the gateleakage current, its influence on g_(ms),g_D and C_G, and the way of lowering the gate leakage currentare also discussed.
%K HIGFETs
%K State characteristics
%K Gate leakage model
%K Anslytic formulas
%K Characteristics of high field region<br>HIGFETs
%K 静态特性模型
%K 栅泄漏模型
%K 解析表式
%K 高场区特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A5C634C0A9482F753E0546175A8CE76B&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=59906B3B2830C2C5&sid=55434AEC30CBAE6B&eid=8587C7CAA7A3D0DB&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0