%0 Journal Article
%T LPE Growth and Properties of In_xGa_(1-x)As_ySb_(1-y)Lattice-Matched to (100) GaSb<br>液相外延生长In_xGa_(1-x)As_ySb_(1-y)/GaSb及其性质研究
%A Liu Xuefeng/Institute of Semiconductors
%A Academia Sinica
%A Beiiing Gong Xuiying/Institute of Semiconductors
%A Academia Sinica
%A Beiiing Wang Zhangou/Institute of Semiconductors
%A Academia Sinica
%A Beiiing
%A <br>刘学锋
%A 龚秀英
%A 王占国
%J 半导体学报
%D 1990
%I 
%X 本文利用液相外延方法,在较大组分范围内(0≤x≤0.17,0≤y≤0.12),成功地生长出了晶格匹配于(100)GaSb衬底的In_xGa_(1-x)As_ySb_(1-x)四元材料,并对其性质进行了实验观察和研究。结果表明,这种表面光亮、层厚均匀、异质结界面平直以及纯度较高、完整性好的外延薄膜是制作超长波长光电器件的理想材料。
%K Liquid phase epitaxy
%K Lattice-match
%K Cathode-luminescence<br>液相外延
%K 晶格匹配
%K 阴极荧光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=271AFC211E98FFB3&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=F3090AE9B60B7ED1&sid=4C49EFA0A53C9DF0&eid=626A0FE8E3130AB5&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0