%0 Journal Article
%T lnfluence of Impurities and Vacancies on Electronic Properties of AlAs/GaAs Superlattices<br>杂质和空位对AlAs/GaAs超晶格电学性质的影响
%A Wang Enge/
%A <br>王恩哥
%A 章立源
%A 王怀玉
%J 半导体学报
%D 1990
%I 
%X Based on the tight-binding approximation (TBA), the electronic structures of short-periodAlAs/GaAs superlattices with impurities and vacancies are calculated by Recursion method forthe first time.The calculated results of local-and partial-density of states clearly show the localenvironment of the relatively small amounts of disordered impurities and vacancies in AlAs/GaAs and their influence on the electronic properties of these materials. The positions of newstates appeared in the band gap of AlAs/GaAs structures with different point defects are calculated.By the aid of the discussion of atom valence, the authors find that there are an electroniccenter around a point defect in the bulk and a local field across the interface with an impurityor a vacancy which will induce a slight shift of the charge density. Comparison of the influencebetween impurity and vacancy on the pure superlattices is given. Furthermore, the authors confirmthat the affect of a disordered point defect is highly localized in all cases.
%K AlAs/GaAs Superlattice
%K Electron structure
%K Local field
%K Electronic center around an impurity or a vacancy<br>AlAs／GaAs
%K 超晶格
%K 电子结构
%K 杂质
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=7E8AAA0ACC96A0D8&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=E158A972A605785F&sid=B78CD622C1934236&eid=10828928EB89AD8E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2