%0 Journal Article
%T Tri-Layer Resist Fabrication Technology of T-Shaped Gate Using X-Ray Lithography<br>用三层胶工艺X射线光刻制作T型栅
%A Sun Jiaxing
%A Ye Tianchun
%A Chen Dapeng
%A Xie Changqing
%A Yi Futing
%A <br>孙加兴
%A 叶甜春
%A 陈大鹏
%A 谢常青
%A 伊福庭
%J 半导体学报
%D 2004
%I 
%X The tri-layer resist technology is used to fabricate T-shaped gate.The fabrication efficiency is high.The shape of T-shaped gate is perfect.The ratio of head to footprint of the T-shaped gate is controllable.The way meets the need of the device fabrication.
%K X-ray lithography
%K PHEMT
%K T-shaped gate
%K tri-layer resist technology<br>X射线光刻
%K PHEMT
%K T型栅
%K 三层胶工艺
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=99EA242DF982A4D1&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=38B194292C032A66&sid=EF78DD85C21CB57F&eid=5DCBAAB000A70168&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=8