%0 Journal Article
%T Contamination of BF_2~+ Beam and the Effects on Implantation Junction Depth<br>BF_2~+注入束的沾污和对结深的影响
%A Li Jinhua/Ion Beam Laboratory
%A <br>李金华
%A 邹世昌
%J 半导体学报
%D 1990
%I 
%X The BF_2~+ beam can be contaminated by BF~+,F~+ and B~+ beams with different energies dueto the collisions between BF_2~+ and the remaining gas moleculae in the system. It is unfavourablefor shallow junction formation because the junction depth would be increased remarkably asshown by the SIMS results. Three methods of removing or decreasing the contamination beamsare presented.
%K Ion implantation
%K Shallow junction fabrication
%K IC process
%K Ion beam analysis<br>离子注入
%K 浅结制备
%K 集成电路工艺
%K 离子束分析
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F500290110EB13C5&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=E158A972A605785F&sid=E39A3F4E3A67639B&eid=B1E36BF7B9783A85&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0