%0 Journal Article
%T Reduction of Stacking Fault Density in Cubic GaN Epilayers via Epitaxial Lateral Overgrowth<br>用侧向外延生长法降低立方相GaN中的层错密度
%A Shen Xiaoming
%A Fu Yi
%A Feng Gan
%A Zhang Baoshun
%A Feng Zhihong
%A Yang Hui
%A <br>沈晓明
%A 付羿
%A 冯淦
%A 张宝顺
%A 冯志宏
%A 杨辉
%J 半导体学报
%D 2002
%I 
%X Epitaxial lateral overgrown (ELOG) cubic GaN (c-GaN) on patterned SiO_2/GaN/GaAs(001) substrates by metalorganic vapor phase epitaxy (MOVPE) is investigated using transmission electron microscope (TEM) and scanning electron microscope (SEM).TEM observations show a substantial reduction of stacking fault density in ELOG c-GaN,compared to that in conventional two-step grown c-GaN.The reduction mechanism of stacking faults in cubic GaN layers via lateral epitaxy is discussed.
%K cubic-GaN
%K MOVPE
%K ELOG
%K SEM
%K TEM<br>立方相GaN
%K MOVPE
%K 侧向外延
%K SEM
%K TEM
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=681040A8FCD277C4&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=F3090AE9B60B7ED1&sid=8DEAC935CD342902&eid=FB3C6F66BC48DD45&journal_id=1674-4926&journal_name=半导体学报&referenced_num=4&reference_num=10