%0 Journal Article
%T An SOI MOSFET Model for Analog Circuit Design<br>一个适用于模拟电路的深亚微米SOIMOSFET器件模型
%A LIAO Huai-lin
%A ZHANG Xing
%A HUANG Ru
%A WANG Yang-Yuan
%A <br>廖怀林
%A 张兴
%A 黄如
%A 王阳元
%J 半导体学报
%D 2001
%I 
%X A physics based model for SOI MOSFET has been presented,which is suitable for the design of analog integrated circuits.The model is proved to be of the fundamental properties,such as charge conservation,MOSFET source to drain intrinsic symmetry,continuity and conversion in derivatives of drain current and natural transition between the fully depleted mode and the partially depleted one of SOI MOSFET.At the same time,some second order effects of deep submicron devices have been described,such as DIBL(Drain Induced Barrier Lower Effect),carrier velocity overshoot and self heating.The accuracy of the presented model has been verified by the experimental data of SOI MOSFET with various geometry.
%K device
%K model
%K deep
%K submicron
%K device
%K SOI
%K MOSFET
%K analog
%K circuits<br>器件模型
%K 深亚微米器件
%K SOIMOSFET
%K 模拟电路
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6A43B9CBE0992337&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=38B194292C032A66&sid=C6EC7357BCACD3A4&eid=9DC563A0FEFC04F9&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=15