%0 Journal Article
%T Annealing Study of Amorphous Films of CoMnNi Oxide<br>CoMnNi氧化物非晶薄膜退火研究
%A Tan Hui/Xinjiang Institute of Physics
%A Academia SinicaTao Mingde/Xinjiang Institute of Physics
%A Academia SinicaHan Ying/Xinjiang Institute of Physics
%A Academia Sinica
%A <br>谭辉
%A 陶明德
%A 韩英
%J 半导体学报
%D 1989
%I 
%X 用高频溅射法生长CoMnNi氧化物非晶薄膜并进行退火实验.对不同温度退火的样品作X射线分析及电阻测量.结果表明,CoMnNi氧化物非晶薄膜在低于550℃退火,薄膜发生结构弛豫,电阻率升高;550～750℃温区退火,薄膜结构产生晶化.随着退火温度的升高,晶化程度增强,电阻率逐步下降;高于750℃退火,薄膜开始由立方尖晶石向四方尖晶石结构转化,电阻率增大.还给出了老化实验结果.
%K Oxide amorphous film
%K Annealing
%K structure relaxation
%K structure Transformation
%K X-ray diffraction spectrum<br>氧化物
%K 薄膜
%K 退火
%K CoMnNi
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9D4D2B9BEB687BE3&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=708DD6B15D2464E8&sid=461E94ABCF58C63F&eid=971ECAFE8682845B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=5