%0 Journal Article
%T Method of Double Crystal in (n~v-n~v) Setting for Determing Strain and Damage Distribution in Ion-Implanted Crystal<br>测定离子注入单晶损伤与应变的双晶(n~v,-n~v)排列方法
%A LI Runshen/
%A <br>李润身
%A H.K.Wagenfel
%A J.S.Williams
%A Stephen Milkins
%A Andrew Stevenson
%J 半导体学报
%D 1990
%I 
%X A double crystal diffraction method with two crystals arranged in(n~v,-n~v)is suggestedaccording to the formation mechanism of rocking curves.The method has a high resolutionand a high sensitivity in the determination of damage and strain in crystals implanted by ions.The limit for choosing glancing angle of X-rays on crystal is discussed considering dispersioneffects.The superiorities of the method are proved in the investigation of the silicon crystalimplanted by gallium ions.A fine oscillation which has not been reported is observed onthe rocking curve.
%K Silicon
%K Ion-implanted
%K Double-crystal X-ray diffraction
%K Rockingcurve
%K X-ray diffraction<br>离子注入
%K 单晶损伤
%K 硅
%K 双晶排列法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=60D03F9D96700095&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=CA4FD0336C81A37A&sid=F3583C8E78166B9E&eid=2A8D03AD8076A2E3&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0