%0 Journal Article
%T Non-Destructive Parameters Extraction for a Novel IGBT SPICE Model and Verified with Measurements<br>新颖的IGBT SPICE模型及非破坏参数提取和验证(英文)
%A Yuan Shoucai
%A Zhu Changchun
%A <br>袁寿财
%A 朱长纯
%J 半导体学报
%D 2003
%I 
%X An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.
%K IGBT
%K subcircuit
%K simulation
%K SPICE-model
%K parameter-extraction<br>绝缘栅双极晶体管
%K 等效电路
%K 模拟
%K SPICE器件模型
%K 参数提取
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=DD1A72B34D5119DC&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=DF92D298D3FF1E6E&sid=6C3EA4F7B6E5F836&eid=C19D5524C51D7FE4&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8