%0 Journal Article
%T Theoretical Investigation of Pinch off Voltage of Box-Like Ion-Implanted 4H-SiC MESFETs<br>离子注入4H-SiC MESFET器件的夹断电压(英文)
%A Wang Shouguo
%A Zhang Yimen
%A Zhang Yuming
%A <br>王守国
%A 张义门
%A 张玉明
%J 半导体学报
%D 2003
%I 
%X A precise theoretical calculation off the pinch of voltage of the box-like ion implantation 4H-SiC MESFETs is investigated with the consideration of the effects of the ion-implanted channel and the depth of MESFETs channel.The implant depth profile is simulated using the Monte Carlo simulator TRIM.The effects of parameters such as temperature,acceptor density,and activation rate on channel depth a,pinch off voltage are studied.
%K silicon carbide
%K ion implantation
%K MESFET
%K pinch off voltage<br>碳化硅
%K 离子注入
%K MESFET
%K 夹断电压
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F517E29AE79E1ADE&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=DF92D298D3FF1E6E&sid=780091CB32840698&eid=80BBC722D530DB8D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13