%0 Journal Article
%T Application of a SiGe Multi-Quantum Well Grown by UHV-CVDfor Thermophotovoltaic Cells<br>UHV-CVD生长的SiGe多量子阱在热光电池领域的应用
%A Sun Weifeng
%A Ye Zhizhen
%A Zhu Liping
%A Zhao Binghui
%A <br>孙伟峰
%A 叶志镇
%A 朱丽萍
%A 赵炳辉
%J 半导体学报
%D 2005
%I 
%X To verify the direct-gap transition of a SiGe multi-quantum well and grope for its application in thermophotovoltaic cells,a high quality SiGe multi-quantum well is grown by our UHV-CVDII system.The absorption measurement of the SiGe multi-quantum well by multiple internal reflection indicates that the extension of the absorption is up to 1450nm and transition probability caused by the quantum effect in the quantum well of strained SiGe thin layer is higher.Consequently,the absorption efficiency of thermophotovoltaic cells will be increased significantly.
%K multi-quantum well
%K low bandgap
%K thermophotovoltaic cells
%K UHV-CVD
%K blackbody radiation<br>多量子阱
%K 窄带隙
%K 热光电池
%K UHV-CVD
%K 黑体辐射
%K 生长
%K SiGe
%K 多量子阱
%K 热光电池
%K 域的应用
%K Cells
%K 实验
%K 存在
%K 量子效应
%K 吸收效率
%K 跃迁几率
%K 波长
%K 黑体辐射
%K 吸收峰
%K 测量结果
%K 吸收谱
%K 红外线
%K 多次反射
%K 外延层
%K 质量
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1D8F1C2D4FCF4F1C&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=708DD6B15D2464E8&sid=4738D4FCFD09C3DC&eid=2166C11758CAF1DD&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=11