%0 Journal Article
%T Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT
%A 张兴宏
%A 杨玉芬
%A 王占国
%J 半导体学报
%D 1997
%I 
%X In most heterostructures there are various interface states due to lattice mismatch or imperfections at the interface.The properties of an AlGaAs/GaAs interface are intimately related to the device performance.The existence of interface states in an Al.Ga,-.As/GaAs heteros...
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FEE3E6E5191A53C6&yid=5370399DC954B911&vid=13553B2D12F347E8&iid=5D311CA918CA9A03&sid=9BF3B0483F192149&eid=DB7B2C790D19BE6E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=0