%0 Journal Article
%T Effect of Growth Temperature on Properties of Single Crystalline ZnO Films Prepared by Atmospheric MOCVD<br>衬底温度对常压MOCVD生长的ZnO单晶膜的性能影响
%A Xiong Chuanbing
%A Fang Wenqing
%A Pu Yong
%A Dai Jiangnan
%A Wang Li
%A Mo Chunlan
%A Jiang Fengyi
%A <br>熊传兵
%A 方文卿
%A 蒲勇
%A 戴江南
%A 王立
%A 莫春兰
%A 江风益
%J 半导体学报
%D 2004
%I 
%X 以H2O作氧源,Zn(C2H5)2作Zn源,N2作载气,在50mmAl2O3(0001)衬底上采用常压MOCVD技术生长出高质量的ZnO单晶薄膜.用X射线双晶衍射、原子力显微镜和光致发光技术对样品进行了综合表征,报道了ZnO单晶膜的(102)非对称衍射结果.研究结果表明,在500～700℃范围内随生长温度升高,ZnO薄膜的双晶摇摆曲线半峰宽增宽,表面粗糙度减小,晶粒尺寸增大,在衬底温度为600℃时生长的ZnO膜的深能级发射最弱.
%K MOCVD
%K ZnO
%K XRD
%K AFM
%K PL<br>MOCVD
%K ZnO
%K X射线双晶衍射
%K 原子力显微镜
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BEC6419E43849277&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=59906B3B2830C2C5&sid=99C22CF1E519BF36&eid=F4403DA1034A7215&journal_id=1674-4926&journal_name=半导体学报&referenced_num=6&reference_num=15