%0 Journal Article
%T Epitaxial Growth of CoSi2 by Co/C/Si Solid Phase Epitaxy<br>Co/C/Si(100)结构固相外延生长CoSi_2
%A Qu Xinping
%A Xu Beilei
%A Ru Guoping
%A Li Bingzong
%A WYCheung
%A SPWong
%A Paul KChu
%A <br>屈新萍
%A 徐蓓蕾
%A 茹国平
%A 李炳宗
%A W Y Cheung
%A S P Wong
%A Paul K Chu
%J 半导体学报
%D 2003
%I 
%X Interlayer mediated solid phase epitaxy (IMSPE) is a kind of important method to grow epitaxial CoSi 2 films on Si substrates.Since the epitaxy mechanism is still not very clear,it is quite necessary to choose certain interlayer to study its role in epitaxial growth of CoSi 2 on Si and the epitaxy mechanism.In this work,carbon is used for interlayer.Four point probe,XRD,AES,RBS are used to analyze the composition,electrical properties and crystallization of the formed film by solid state reaction.The results show that the CoSi 2 films with good electrical characteristics and thermal stability can be obtained for Co/C/Si structure after annealing.The C reacts with Co to form Co 3C alloy during the reaction,which acts as a diffusion barrier,retards the interdiffusion and mutual reaction between Co and Si.This promotes the epitaxial growth of CoSi 2 on Si substrates.The role of C interlayer during the epitaxial growth of CoSi 2 on Si is analyzed.
%K solid state reaction
%K solid phase epitaxy
%K metal silicide<br>固相反应
%K 固相外延
%K 金属硅化物
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=064AE00A12D62BB1&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=CA4FD0336C81A37A&sid=E84BBBDDD74F497C&eid=5D71B28100102720&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=14