%0 Journal Article
%T HBT''''s High Frequency Noise Modeling and Analysis<br>异质结双极晶体管高频噪声建模及分析(英文)
%A Wang Yanfeng
%A Wu Dexin
%A <br>王延锋
%A 吴德馨
%J 半导体学报
%D 2002
%I 
%X A T equivalent high frequency heterojunction bipolar transistor (HBT) noise model is reported.This model is derived from Hawkins noise model commonly used in Si BJT.The main modifications include the influence of the ideality factor,emitter resistance,intrinsic base collector capacitance,extrinsic base collector capacitance and other parasitic elements of HBT represented in equivalent circuit topology.In order to calculate accurate noise parameters from the equivalent circuit,the noise correlation matrix method is used to avoid any simplifications generated in circuit transformations and complex noise measurements.The analysis of the influence of the equivalent circuit elements on the minimum noise figure is reported,the results of analysis agree well with the physics explanations.By means of the formulae derived from device physics of HBT,the influence of device parameters on the minimum noise figure is also represented.
%K heterojunction bipolar transistor
%K noise modeling
%K noise correlation matrix<br>异质结双极晶体管
%K 高频噪声模型
%K 噪声相关矩阵
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F6CC62FCD36D0650&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=708DD6B15D2464E8&sid=D932AD0F8FDA3032&eid=F9AB8F3D624A89DB&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=6