%0 Journal Article
%T Super-Fast Fully Depleted CMOS/SOI Ring Oscillator with Delay Time of 45ps<br>45ps的超高速全耗尽CMOS/SOI环振
%A LIU Xin
%A |yu
%A SUN Hai
%A |feng
%A HAI Chao
%A |he
%A WU De
%A |xin
%A <br>刘新宇
%A 孙海峰
%A 海潮和
%A 吴德馨
%J 半导体学报
%D 2000
%I 
%X The fully depleted CMOS/SOI device and circuit with channel length of 0 8 micron are studied.The well\|behaved characteristics of device and circuit are achieved,the propagation delay per\|stage of 101\|stage 0 8 micron CMOS/SOI ring oscillator is 45ps with 5V supply voltage.As thickness of silicon and channel length reduced,the speed of circuit are increased.The 0 8 micron CMOS/FDSOI ring oscillator is 30 per cent faster than 0 8 micron CMOS/PDSOI ring oscillator,and 15 per cent faster than 1 micron CMOS/FDSOI ring oscillator.
%K fully depleted
%K CMOS/SOI device
%K ring oscillator<br>全耗尽
%K CMOS/SOI器件
%K 环振
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5833FF5431FB86ED&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=5D311CA918CA9A03&sid=CE16DE2ABCD4D365&eid=AB1DE136C335A86C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7