%0 Journal Article
%T Analytical Modeling of Threshold Voltage for Double-Gate MOSFET Fully Comprising Quantum Mechanical Effects
%A Zhang Dawei
%A Tian Lilin
%A Yu Zhiping
%A <br>Zhang Dawei
%A Tian Lilin
%A and Yu Zhiping
%J 半导体学报
%D 2005
%I 
%X The analytical solutions to 1D Schrodinger equation (in depth direction) in douBle-gate (DG) MOSFETs are derived to calculate electron density and threshold voltage.The non-uniform potential in the channel is concerned with an arbitrary depth so that the analytical solutions agree well with numerical ones.Then,an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical (QM) effects.This model predicts an increased electron density with an increasing channel depth in subthreshold region or mild inversion region.However,it becomes independent on channel depth in strong inversion region,which is in accordance with numerical analysis.It is also concluded that the QM model,which barely considers a box-like potential in the channel,slightly overpredicts threshold voltage and underestimates electron density，and the error increases with an increasing channel depth or a decreasing gateoxide thickness.
%K DG MOSFET
%K 1D analytical QM solution
%K non
%K uniform potential in channel
%K depth direction
%K electron density
%K threshold voltage
%K channel depth<br>双栅MOSFET
%K 一维解析量子求解
%K 沟道深度方向的非均匀电势
%K 电子密度
%K 阈电压
%K 沟道深度
%K DG
%K MOSFET
%K 1D
%K analytical
%K QM
%K solution
%K non-uniform
%K potential
%K in
%K channel-depth
%K direction
%K electron
%K density
%K thresholdvoltage
%K channel
%K depth
%K 量子效应
%K 双栅
%K MOSFET
%K 阈电压
%K 解析建模
%K Quantum
%K Mechanical
%K Effects
%K Threshold
%K Voltage
%K Modeling
%K error
%K decreasing
%K thickness
%K numerical
%K analysis
%K independent
%K strong
%K However
%K model
%K increased
%K increasing
%K channel
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0F9E66658B49D5AF&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=38B194292C032A66&sid=9BA67A0B76A3DBA8&eid=8D75AD3BD0D1BCC5&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=17