%0 Journal Article
%T Phosphorus Doping by Cold Emitting Electron Beam<br>冷发射电子束掺杂磷
%A Li Xiuqiong/Microelectronics Center
%A Academia SinicaWang Peida/Microelectronics Center
%A Academia SinicaMa Xiangbin/Microelectronics Center
%A Academia SinicaWang Chun/Microelectronics Center
%A Academia Sinica
%A <br>李秀琼
%A 王培大
%A 马祥彬
%A 王纯
%J 半导体学报
%D 1990
%I 
%X 一种新的冷发射电子束掺杂方法已研究成功。这种方法可实现高浓度(C_(max)=2.8×10~(20)/cm~3),超浅结(x_j)_(min)≤0.1μm],而且损伤比离子注入的小得多。用这种方法制备的太阳能电池控制器件性能很好。
%K Cold emitted electron beam
%K Doping
%K Super-shallow junction<br>冷发射电子束
%K 掺杂
%K 磷
%K 集成电路
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=EE730C07B5F0F2B6&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=59906B3B2830C2C5&sid=72D13CE6C162BDF4&eid=D4A72ABDCEDCE1BD&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=4