%0 Journal Article
%T Influence of Structure Parameters on the Hot-Carrier-Effect Immunity and Short-Channel-Effect Suppression in Deep-Sub-Micron Grooved Gate PMOSFET<br>深亚微米槽栅PMOSFET结构参数对其抗热载流子效应和短沟道抑制作用的影响
%A REN Hong
%A xia
%A HAO Yue
%A <br>任红霞
%A 郝跃
%J 半导体学报
%D 2001
%I 
%X Based on the hydro dynamic energy transport model,the influences of structure parameters on the hot carrier effect immunity and the suppression of short channel effect in deep sub micron grooved gate PMOSFET are studied and explained in terms of the device interior physics mechanism.These investigated structure parameters include the concave corner,the negative junction depth and the doping density of channel and substrate.The research results indicate that with the increase of the concave corner,the negative junction depth and the doping density of channel,the hot carrier effect immunity is enhanced;the threshold voltage increases and the short channel effect is suppressed.But as the doping density of substrate rises,although the short channel effect is enhanced,the hot carrier effect immunity becomes weaker.
%K deep
%K sub
%K micron
%K grooved gate PMOSFET
%K hot
%K carrier
%K effect
%K short
%K channel
%K effect
%K structure parameters<br>深亚微米
%K 槽栅PMOSFET
%K 热载流子效应
%K 短沟道效应
%K 结构参数
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=08FE8BADD4E89FDE&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=F3090AE9B60B7ED1&sid=61548B9F608D3CE3&eid=3BA4B6BD78D34019&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=4