%0 Journal Article
%T A Novel Analytical Model for Surface Electrical Field Distribution and Optimization of TFSOI RESURF Devices<br>TFSOI RESURF功率器件表面电场分布和优化设计的新解析模型(英文)
%A HE Jin
%A ZHANG Xing
%A HUANG Ru
%A WANG Yang-Yuan
%A <br>何进
%A 张兴
%A 黄如
%A 王阳元
%J 半导体学报
%D 2001
%I 
%X A novel analytical model for the thin film silicon on insulator (TFSOI) reduced surface field (RESURF) devices has been proposed.Based on the 2-D Poisson equation solution,the analytical expressions for the surface potential and field distributions are derived.From this analysis,the optimum design condition for the maximum breakdown voltage is obtained.The dependence of the maximum breakdown voltage on the drift region length is examined and the relationship between the critical doping concentration and the front- and back- interface oxide layer thickness is discussed.The numerical simulation performed by the advanced semiconductor simulation tool,DESSIS-ISE,has been shown to support the analytical results.
%K TFSOI RESURF devices
%K surface
%K electric field
%K distribution
%K potential profile
%K breakdown voltage
%K optimum design<br>TFSOI
%K RESURF器件
%K 表面电场分布
%K 电势分布
%K 击穿电压
%K 优化设计
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B9D4AEE623C7B415&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=E158A972A605785F&sid=EE23223CE4332BD7&eid=A53D7AA35F9929AF&journal_id=1674-4926&journal_name=半导体学报&referenced_num=6&reference_num=10