%0 Journal Article
%T Three Pulse DLTS Method Proposed to Eliminate the Edge Region Effect and its Applications to the Measurements of DX-Centers Capture Barriers of<br>消除边缘区效应的“三脉冲DLTS”法及对DX-中心俘获过程的测量
%A XIE Maohai/Institute of Semiconductors
%A Academia Sinica
%A BeijingGAO Jilin/Institute of Semiconductors
%A Academia Sinica
%A BeijingGE Weikun/Institute of Semiconductors
%A Academia Sinica
%A BeijingZHOU Jie/Institute of Semiconductors
%A Academia Sinica
%A Beijing
%A <br>谢茂海
%A 高季林
%A 葛惟锟
%A 周洁
%J 半导体学报
%D 1990
%I 
%X The authors developed a new method-Three Pulse DLTS method-for the measurementof the capture cross-section of deep levels. The effect of edge region can be eliminatedWe have also meaured the capture cross-section of the DX-center in Al_x Ca_(1-x)As:Si sampleswith different Al mole fraction x by the method and have got some satisfied results aidedby computer regression process in which,the high concentrations of deep center have beentaken into account.
%K Deep levels
%K DX-Center
%K DLTS<br>深能级
%K DX-中心
%K DLTS
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E19E76CD79D78FCE&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=CA4FD0336C81A37A&sid=CA4FD0336C81A37A&eid=B31275AF3241DB2D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0