%0 Journal Article
%T Charge Distribution of Mo-B Complex in Silicon<br>硅中Mo-B络合物的电荷分布
%A Wu Ji''''an/Institute of Semiconductors
%A Academia Sinica
%A BeijingZhou Jie/Institute of Semiconductors
%A Academia Sinica
%A BeijingZhang Daren/Research Center for Eco-Environment Sciences
%A Academia Sinica
%A Beijing
%A <br>吴汲安
%A 周洁
%A 张大仁
%J 半导体学报
%D 1989
%I 
%X 我们对硅中Mo-B络合物的电子态作了SW-Xα自洽计算.通过体系电荷分布分析,结合前文Pd-B络合物的结果,对已被广为接受的描写间隙位过渡金属杂质和替代位IIIA族受主杂质络合物的离子模型的正确性提出了怀疑.
%K 硅
%K 深能级
%K 络合物
%K 电子结构
%K 电荷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=71FE90CD1688F307557AE4606EBD232B&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=59906B3B2830C2C5&sid=793F041A4288469A&eid=F5956B5D26BCB2A8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=4