%0 Journal Article
%T A Novel Depletion-Mode MOS Gated Emitter Shorted Thyristor<br>A Novel Depletion- Mode MOS Gated Emitter Shorted Thyristor
%A ZHANG He-ming
%A DAI Xian-ying
%A ZHANG Yi-men
%A MA Xiao-hua
%A LIN Da-song
%A <br>张鹤鸣
%A 戴显英
%A 张义门
%A 马晓华
%A 林大松
%J 半导体学报
%D 2000
%I 
%X A Novel MOS\|gated thyristor, depletion\|mode MOS gated emitter shorted thyristor (DMST),and its two structures are proposed.In DMST,the channel of depletion\|mode MOS makes the thyristor emitter\|based junction inherently short.The operation of the device is controlled by the interruption and recovery of the depletion\|mode MOS P channel.The perfect properties have been demonstrated by 2\|D numerical simulations and the tests on the fabricated chips.
%K thyristor
%K MOS gate<br>Thyristor
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8A7469DB3BD2505C&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=B31275AF3241DB2D&sid=323E8A365B085E0B&eid=1918ADDC93A85779&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=6