%0 Journal Article
%T Growth of Thin Silicon on Sapphire (SOS) Film Materials and Device Applications<br>薄层SOS薄膜材料外延生长及其器件应用(英文)
%A WANG Qi-yuan
%A NIE Ji-ping
%A LIU Zhong-li
%A YU Yuan-huan
%A <br>王启元
%A 聂纪平
%A 刘忠立
%A 郁元桓
%J 半导体学报
%D 2000
%I 
%X The increasing emphasis on the sub\|micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200nm. It is demonstrated that the crystalline quality of as\|grown thin SOS films by chemically vapor deposition method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self\|silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a great improvement in silicon layer crystallinity and channel carrier mobility, respectively by double crystal X\|ray diffraction and electrical measurements. Thin SPE SOS films would have application to the high\|performance CMOS circuitry.
%K silicon
%K epitaxial growth
%K solid phase epitaxy<br>硅
%K 外延生长
%K 固相外延
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=757BAC9D4BFCEB1F&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=B31275AF3241DB2D&sid=68FF5306A8F9C315&eid=652E7E360EBE3082&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=8