%0 Journal Article
%T A Novel Polysilicon and Oxide Sandwich Deep Trench with Field Limiting Ring for RF Power Transistors<br>射频功率晶体管的多晶硅二氧化硅夹心深槽场限制环新结构(英文)
%A Chee Chenjie
%A Fu Jun
%A Wang Junjun
%A Liu Litian
%A <br>齐臣杰
%A 傅军
%A 王军军
%A 刘理天
%J 半导体学报
%D 2004
%I 
%X A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices.Simulation result shows that nearly 100% breakdown voltage of the plane junction can be realized.
%K deep trench
%K field limiting ring
%K breakdown voltage<br>击穿电压
%K 场限制环
%K 射频功率器件
%K 夹心槽
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B597E19309F40753&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=708DD6B15D2464E8&sid=C4160F9DDB7598AD&eid=A41D5AE06B0DB66D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12