%0 Journal Article
%T 0.25μm GaAs-Based MHEMT Device<br>0.25μm GaAs基MHEMT器件
%A Shi Huafen
%A Liu Xunchun
%A Zhang Haiying
%A Shi Ruiying
%A Wang Runmei
%A Wang Ning
%A Luo Mingxiong
%A <br>石华芬
%A 刘训春
%A 张海英
%A 石瑞英
%A 王润梅
%A 汪宁
%A 罗明雄
%J 半导体学报
%D 2004
%I 
%X m GaAs-based InAlAs/InGaAs MHEMT device fabricated in our laboratory is introduced.The extrinsic transconductance of the device is 522mS/mm while channel current density is 490mA/mm,and the calculated cutoff frequency is 75GHz.The device performances are better than the GaAs-based InGaP/InGaAs PHEMT,which is fabricated with the same processes.By the analysis of the results,the MHEMT small signal equivalent circuit model parameters are extracted.Finally,the methods to improve the characteristics of these devices are also described.
%K InAlAs/InGaAs
%K MHEMT
%K PHEMT<br>铟铝砷/铟镓砷
%K 变组分高电子迁移率晶体管
%K 赝配高电子迁移率晶体管
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=559DC2B943737387&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=38B194292C032A66&sid=86C0C9A759FDA8CA&eid=A5B34D9E8FDA439A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7