%0 Journal Article
%T Monolithic Integration of Amplifier with MSM-PD on GaAs<br>GaAs探测器与放大电路的单片集成
%A Yang Qinqing/Institute of Semiconductors
%A Academia Sinica Gao Junhua/Institute of Semiconductors
%A Academia Sinica
%A <br>杨沁清
%A 高俊华
%J 半导体学报
%D 1990
%I 
%X 本文介绍一种结构简单且与GaAs MESFET的制备工艺相容的GaAs MSM-PD器件,它可用作探测短波长激光。文中介绍了MSM—PD的特性,还叙述了它与MESFET放大电路的单片集成工艺。最后给出了集成芯片测试的初步结果。
%K monolithic integration
%K MSM-PD
%K MESFET
%K WSi_x<br>GaAs
%K 探测器
%K 放大电路
%K 单片集成
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=475A73C86B3B197D&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=94C357A881DFC066&sid=396DD691E964F390&eid=4F0B2F798E08B761&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0