%0 Journal Article
%T Study of In Situ Measurement of Residual Tensile Stress in Thin Films for T-Shaped Microstructures<br>T形结构在位测量薄膜中残余张应力的理论研究
%A Xu Fangqian
%A Xu Lian
%A He Shitang
%A <br>徐方迁
%A 徐联
%A 何世堂
%J 半导体学报
%D 2004
%I 
%X 给出了考虑梁的轴向载荷情况下理论计算公式的推导过程 ,在变形较大时两种公式计算结果最大相差9.6 5 % .用 L PCVD技术制作了几种大小不同的 T形梁结构 ,给出了残余张应力与杨氏模量比值 .
%K stress
%K film
%K flection<br>应力
%K 膜
%K 变形
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BBFB789DBA425D82&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=94C357A881DFC066&sid=0A8675156EB60B87&eid=1D5555D0B4345CA8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=7