%0 Journal Article
%T Ultra high-speed InP/InGaAs SHBTs with ft and fmax of 185 GHz
%A Zhou Lei
%A Jin Zhi
%A Su Yongbo
%A Wang Xiantai
%A Chang Hudong
%A Xu Anhuai
%A Qi Ming
%A <br>周磊
%A 金智
%A 苏永波
%A 王显泰
%A 常虎东
%A 徐安怀
%A 齐鸣
%J 半导体学报
%D 2010
%I 
%X An InP/InGaAs single heterojunction bipolar transistor (SHBT) with high maximum oscillation frequency (fmax) and high cutoff frequency (ft) is reported. Efforts have been made to maximize fmax and ft simultaneously including optimizing the epitaxial structure, base–collector mesa over-etching and base surface preparation. The measured ft and fmax both reached 185 GHz with an emitter size of 1 × 20 μ m2, which is the highest fmax for SHBTs in mainland China. The device is suitable for ultra-high speed digital circuits and low power analog applications.
%K InP
%K single heterojunction bipolar transistor
%K maximum oscillation frequency<br>InP
%K single
%K heterojunction
%K bipolar
%K transistor
%K maximum
%K oscillation
%K frequency
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=96DA10F22EF254D3E4F9ED4A24BCE53B&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=9CF7A0430CBB2DFD&sid=04F3FB3AFE39FE4B&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=0