%0 Journal Article
%T Screening Influence on Binding Energies of Donors in Quantum Wells with Finite Barriers Under Hydrostatic Pressure<br>压力下屏蔽对有限深量子阱中施主结合能的影响
%A Wen Shumin
%A Ban Shiliang
%A <br>温淑敏
%A 班士良
%J 半导体学报
%D 2006
%I 
%X The energy levels of donors in quantum wells with finite barriers are investigated using a variational method.We consider the variations of the electron effective mass,dielectric constant,and conduction band offset between the well and barriers with hydrostatic pressure,and we take into account the screening effect on the Coulombic potential of an impurity from the 2D electron gas.Numerical calculations are performed for the binding energies of impurity states in GaAs/AlxGa1-xAs quantum well systems.The relations between the binding energies of donors and Al concentration,well width,and hydrostatic pressure are given.The difference between the cases with and without screening is discussed.The results indicate that the screening increases with pressure,resulting in a decrease in the binding energies of the impurity states.
%K quantum well
%K screening
%K pressure
%K impurity state binding energy<br>量子阱
%K 屏蔽
%K 压力
%K 杂质态
%K 结合能
%K 流体静压力
%K 屏蔽效应
%K 有限
%K 量子阱
%K 施主
%K 结合能
%K 屏蔽影响
%K Hydrostatic
%K Pressure
%K Barriers
%K Finite
%K Quantum
%K Wells
%K Binding
%K Influence
%K 结果
%K 关系
%K 阱宽
%K 铝组分
%K 数值计算
%K 系统
%K GaAs
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0839F9D67BB89FC6&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=CA4FD0336C81A37A&sid=E84BBBDDD74F497C&eid=5D71B28100102720&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=16