%0 Journal Article
%T A Novel Method for Determining theEtch Rate Distributions of Si<br>测定硅各向异性腐蚀速率分布的新方法
%A YANG Heng
%A BAO Min
%A |hang
%A SHEN Shao
%A |qun
%A LI Xin
%A |xin
%A <br>杨恒
%A 鲍敏杭
%A 沈绍群
%A 李昕欣
%A 张大成
%A 武国英
%J 半导体学报
%D 2000
%I 
%X A novel method for measuring the anisotropic etch rate distributions of Si is described. A three\|dimensional anisotropic etch rate distribution of Si can be described by two\|dimensional etch rate distributions in a series of crystal planes. Deep reactive ion etching (DRIE) is used for creating rectangular trenches whose sidewalls are perpendicular to the wafer surface in {0 mn } wafers. By measuring the width of the trenches before and after anisotropic etching, two\|dimensional distributions in { 0mn} wafers can be determined. With the two\|dimensional distributions, the three\|dimensional distributions can be determined. As the height of the vertical side walls made by DRIE is high enough to withstand reasonable long time etching, a conventional microscope is accurate enough. Etch rate distributions of { n 10} and {\%n11}\% crystal planes in 40% KOH and 25% TMAH are presented.
%K anisotropic etching
%K silicon
%K anisotropic etching
%K KOH<br>硅
%K 各向异性腐蚀
%K KOH
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C3ECF7C858666EEB&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=94C357A881DFC066&sid=9B1D77939DDB4B89&eid=37F781FD8E744761&journal_id=1674-4926&journal_name=半导体学报&referenced_num=4&reference_num=6