%0 Journal Article
%T Investigation of Deep Trap Center of AlN Grown on Si Substrate<br>Si基MOCVD生长AlN深陷阱中心研究
%A Deng Yongzhen
%A Zheng Youdou
%A Zho u Chunhong
%A Kong Yuechan
%A Chen Peng
%A Ye JiandongGu Shulin
%A Shen Bo
%A Zhang Rong
%A Jiang Ruolian
%A Han Ping
%A Shi Yi
%A <br>邓咏桢
%A 郑有炓
%A 周春红
%A 孔月婵
%A 陈鹏
%A 叶建东
%A 顾书林
%A 沈波
%A 张荣
%A 江若琏
%A 韩平
%A 施毅
%J 半导体学报
%D 2004
%I 
%X The deep trap center of AlN grown on Si substrate is investigated with PL spectr a and Raman spectra.Three deep trap centers E t1, E t2 and E t3 are found at 2.61,3.10,and 2.11eV above E v,respectively. E t1 is induced by superposition of the peak of O impurities and peak o f N vacancies (or interstitial Al atoms).Because of the high growth temperature, Si atoms diffuse into the AlN layer and take the places of Al atoms and Si-N bo nds are formed.After annealing,when the density of Si is higher than a critical one,some Si atoms take the places of N atoms and Al-Si bonds are formed. E t2 is induced by Si-N bonds and E t3 by Al-Si bonds.It is also fo und that E t1 and E t2,the deep trap centers,are stable even a fter high temperature annealing for several hours.
%K AlN grown on Si substrate
%K deep
%K trap center
%K PL spectra<br>Si基AlN
%K 深陷阱中心
%K PL谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=31BE821546F29D1E&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=9CF7A0430CBB2DFD&sid=8DABBEB130EFF191&eid=0EFDF9DD0F63E842&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11