%0 Journal Article
%T Transport Properties of GaAs/AlGaAs Quantum Well<br>GaAs/AlGaAs量子阱的输运特性
%A Wang Xinghua/National Laboratory for Superlattice
%A Related Microstructures
%A Institute of Semiconductors
%A Academia Sinica
%A P O Box
%A Beijing
%A China Zheng Houzhi/National Laboratory for Superlattice
%A Related Microstructures
%A Institute of Semiconductors
%A Academia Sinica
%A P O Box
%A Beijing
%A China
%A <br>王杏华
%A 郑厚植
%J 半导体学报
%D 1990
%I 
%X 本文研究了低迁移率GaAs/AlGaAs量子阱的散射机制。由电导测量和Shubnikov de-Haas振荡曲线分别得到输运散射时间τ_0和弛豫时间τ_q(量子散射时间)。在GaAs/AlGaAs量子阱中,τ_0≈τ_q;而在调制掺杂的异质结中,τ_0》τ_q。用量子阱、异质结中起支配作用的散射机构不同很好地解释了实验结果。本文还研究了弱磁场下量子阱的负磁阻效应,这是磁场抑制了电子局域态的结果。
%K Transport properties
%K GaAs/AlGaAs
%K Quantum well<br>GaAs／AlGaAs
%K 量子阱
%K 运输特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8A4D2D166FDE150391DE0A65434D773E&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=F3090AE9B60B7ED1&sid=0EE24608F5763811&eid=20D29EF591CB2C94&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0