%0 Journal Article
%T Physical Behaviour of Zinc-Implanted Silicon<br>注锌硅的物理行为
%A Lu Liwu/Institute of Semiconductors
%A Academia Sinica
%A Beijing Hsu Chenchia/Institute of Semiconductors
%A Academia Sinica
%A Beijing Yin Shiduan/Institute of Semiconductors
%A Academia Sinica
%A Beijing
%A <br>卢励吾
%A 许振嘉
%A 殷士端
%J 半导体学报
%D 1990
%I 
%X 对经不同方式处理的注锌硅样品(注入剂量1×10~(14)-1×10~(17)cm~(-2),注入能量170keV和180keV)的物理行为进行了研究。样品的CWCO_2激光退火和快速淬火处理是在特定的实验条件下进行。分别利用高分辨的背散射-沟道效应和全自动扩展电阻探针进行研究。结果表明,硅中锌主要占据晶格的间隙位置,并且起弱施主作用。CWCO_2激光退火期间锌扩散系数表明,它是一种间隙扩散机理。
%K Ion Implantation
%K Laser Annealing
%K Rutherford Backscattering/Channelling Effect
%K Spread Resistance<br>注镜硅
%K 离子注入
%K 间隙扩散
%K 实验
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8E9311C997EA6193&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=94C357A881DFC066&sid=4B168891B5E5FB30&eid=15251AE9C02726D3&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2