%0 Journal Article
%T Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD<br>75mm 4°偏轴4H-SiC水平热壁式CVD外延生长
%A Li Zheyang
%A Dong Xun
%A Zhang Lan
%A Chen Gang
%A Bai Song
%A Chen Chen
%A <br>李哲洋
%A 董逊
%A 张岚
%A 陈刚
%A 柏松
%A 陈辰
%J 半导体学报
%D 2008
%I 
%X 利用水平热壁式CVD外延生长技术,在75mm偏向1120方向4°的(0001)Si-面n型导电衬底上同质外延生长了4H-SiC薄膜.光学显微镜和原子力显微镜测试结果表明外延层表面存在三角形、胡萝卜状等典型的4°偏轴外延缺陷及普遍的台阶形貌.通过优化外延参数,片内浓度均匀性(σ/mean)和厚度均匀性分别达到4.37%和l.81%.
%K horizontal hot-wall CVD
%K 4H-SiC
%K homoepitaxy
%K uniformity<br>水平热壁式CVD
%K 4H-SiC
%K 同质外延
%K 均匀性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4CF3BD3704FC460D01A2FF4C32796C37&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=DF92D298D3FF1E6E&sid=AFB21040E5F48417&eid=9C959CAF55D6B1C2&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=5