%0 Journal Article
%T Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers
%A Deng Shengling
%A Huang Yongzhen
%A Jin Chaoyuan
%A Yu Lijuan
%A <br>Deng Shengling
%A Huang Yongzhen
%A Jin Chaoyuan
%A and Yu Lijuan
%J 半导体学报
%D 2005
%I 
%X Quantum dot gain spectra based on harmonic oscillator model are calculated including and excluding excitons.The effects of non-equilibrium distributions are considered at low temperatures.The variations of threshold current density in a wide temperature range are analyzed and the negative characteristic temperature and oscillatory characteristic temperature appearing in that temperature range are discussed.Also,the improvement of quantum dot lasers’ performance is investigated through vertical stacking and p-type doping and the optimal dot density,which corresponds to minimal threshold current density, is calculated.
%K quantum dot lasers
%K multiple energy levels
%K gain spectrum
%K temperature dependence<br>quantum
%K dot
%K lasers
%K multiple
%K energy
%K levels
%K gain
%K spectrum
%K temperature
%K dependence
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=865EBA26E7F5DB63&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=F3090AE9B60B7ED1&sid=A75E3615CCFA3AD1&eid=2CCF18D0FC32D483&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=13